Thin film semiconductor device

Details Thin film semiconductor device Thin film semiconductor device

1983-11-23

1986-03-25

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Thermoelectric

Radiation pyrometer

136258, 427 39, 357 2, H01L 2904, H01L 3106

Patent

active

045786968

ABSTRACT:
A thin film semiconductor device and a method for manufacturing such a device containing a thin film semiconductor layer in which there is no misalignment between a semiconductor layer containing a microcrystalline phase and an adjacent layer having no such phase. A junction region is interposed between the two amorphous semiconductor layers having a microcrystalline phase content which varies gradually from the content of the amorphous semiconductor layer having no microcrystalline phase to that of the layer having a microcrystalline phase. The junction region may be formed by the use of a glow discharge decomposition technique wherein the discharge power is gradually varied.

REFERENCES:
patent: 4433202 (1984-02-01), Maruyama et al.
patent: 4498092 (1985-02-01), Yamazaki

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