Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-05-26
1996-11-19
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257 59, H01L 2904
Patent
active
055765556
ABSTRACT:
A thin film semiconductor device includes a gate electrode, a gate insulating electrode, a thin film semiconductor layer, an ohmic layer, source and drain electrodes, and a protective layer. The protective layer contains an impurity for controlling conductivity.
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Ishii Takayuki
Yamanobe Masato
Bowers Courtney A.
Canon Kabushiki Kaisha
Crane Sara W.
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