Thin film resistor structure and method of fabricating a...

Details Thin film resistor structure and method of fabricating a... Thin film resistor structure and method of fabricating a...

2006-09-26

2006-09-26

Ahmed, Shamim (Department: 1765)

Etching a substrate: processes

Forming or treating electrical conductor article

Forming or treating of groove or through hole

C216S013000, C216S016000, C216S017000, C204S192320, C029S620000, C029S832000, C438S384000

Reexamination Certificate

active

07112286

ABSTRACT:
A thin film resistor structure and a method of fabricating a thin film resistor structure is provided. The thin film resistor structure includes an electrical interface layer or head layer that is a combination of a Titanium (Ti) layer and a Titanium Nitride (TiN) layer. The combination of the Ti layer and the TiN layer mitigates resistance associated with the electrical interface layers.

REFERENCES:
patent: 5870121 (1999-02-01), Chan
patent: 6284652 (2001-09-01), Charneski et al.
patent: 6313027 (2001-11-01), Xu et al.
patent: 6429128 (2002-08-01), Besser et al.
patent: 6475400 (2002-11-01), Lammert
patent: 6607962 (2003-08-01), Zekeriya et al.
patent: 6930299 (2005-08-01), Ohkawa

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