Thin film resistor structure and fabrication method thereof

Details Thin film resistor structure and fabrication method thereof Thin film resistor structure and fabrication method thereof

2011-08-23

2011-08-23

Lee, Kyung (Department: 2833)

Electrical resistors

With base extending along resistance element

Resistance element and/or terminals printed or marked on base

C338S333000, C338S326000, C029S620000

Reexamination Certificate

active

08004386

ABSTRACT:
A thin film resistor structure is disclosed. The resistor structure comprises a resistor film comprising a copper oxide layer and a plurality of metal islands thereon. The copper oxide layer has a top surface comprising a plurality of adjacent nodule-shaped recess regions, in which vacancies are formed between the nodule-shaped recess regions and are arranged in reticulate distribution. The plurality of metal islands is respectively distributed in the vacancies between the nodule-shaped recess regions. A method for fabricating the thin film resistor structure is also disclosed.

REFERENCES:
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patent: 5278012 (1994-01-01), Yamanaka et al.
patent: 5652540 (1997-07-01), Eilley
patent: 5661450 (1997-08-01), Davidson
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patent: 11-340595 (1999-12-01), None
patent: 2004-040073 (2004-02-01), None
patent: 2005-123481 (2005-05-01), None
patent: 2008-288467 (2008-11-01), None
Japan Patent Office, Notice of Allowance, Patent Application Serial No. 2008-307478, Mar. 8, 2011, Japan.

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