Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-07-15
2008-07-15
Dang, Trung (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S537000, C257SE27016, C257SE27047
Reexamination Certificate
active
11342134
ABSTRACT:
The present invention relates to a thin film resistor formed over a semiconductor substrate. A gate structure is formed and a dielectric layer is formed over the gate structure. A via is then etched that extends through the dielectric layer so as to expose a conductive layer of the gate structure. A layer of titanium nitride is deposited and a rapid thermal anneal is performed in an oxygen ambient. The rapid thermal anneal incorporates oxygen into the titanium nitride, forming titanium oxynitride film. A layer of dielectric material is then deposited and etched-back to form a dielectric plug that fills the remaining portion of the via. The titanium oxynitride film is patterned to form a titanium oxynitride structure that is electrically coupled to the gate structure.
REFERENCES:
patent: 5710070 (1998-01-01), Chan
patent: 6667537 (2003-12-01), Koike et al.
Cao Wanqing
Jin Gaolong
Lee Shih-Ked
Lo Guo-Qiang
Dang Trung
Glass Kenneth
Glass & Associates
Integrated Device Technology Inc.
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