Thin film resistor for strain gauge

Details Thin film resistor for strain gauge Thin film resistor for strain gauge

1989-09-07

1991-03-19

Reynolds, Bruce A.

Electrical resistors

With base extending along resistance element

Resistance element coated on base

338 2, H01C 1012, G01L 122

Patent

active

050014544

ABSTRACT:
A thin film resistor for a strain gauge prepared by physical or chemical vapor deposition. The resistor contains 60 to 98 atomic % of chromium, 2 to 30 atomic % of oxygen, and 0 to 10 atomic % of a metal or semiconductor. These constituents are uniformly distributed. The thickness of the film is between 0.01 and 10 .mu.m. The metal is at least one of Al, Ti, Ta, Zr and In, and the semiconductor is at least one of silicon, germanium and boron. The thin film resistor has excellent resistance-strain characteristics and resistance-temperature characteristics, as well as high sensitivity and mechanical strength.

REFERENCES:
patent: 4151502 (1979-04-01), Kurihara et al.
patent: 4462018 (1984-07-01), Yang et al.
patent: 4786887 (1988-11-01), Bringmann et al.

Affiliated with

Also associated with

Rating

Thin film resistor for strain gauge does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film resistor for strain gauge, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film resistor for strain gauge will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2013043