Thin film resistor for an integrated circuit semiconductor devic

Details Thin film resistor for an integrated circuit semiconductor devic Thin film resistor for an integrated circuit semiconductor devic

1984-10-19

1986-09-02

Albritton, Clarence L.

Electrical resistors

Resistance value responsive to a condition

Current and/or voltage

338 22R, 338306, 252512, H01C 710, H01C 713

Patent

active

046099034

ABSTRACT:
A thin film resistor for use in microelectronic devices, the resistor having a resistive layer comprising silicon nitride (Si.sub.3 N.sub.4) and refractory metals of tungsten and/or molybdenum. The features of the structure of the resistor is that the film comprises a silicon nitride layer and grains of metal and/or metal silicide, wherein the resistivity is determined mainly by the silicon nitride. Therefore, the total resistance of the resistor can be controlled by controlling the amount of the silicon nitride, thus providing a wide range of the resistivity of 10.sup.-3 to 10.sup.9 .OMEGA.cm. Other characteristics such as immunity to the dopant contained in an adjacent doped layer, namely heat resistivity and low activation energy of the resistivity are verified by associated experiments.

REFERENCES:
patent: 3876912 (1985-04-01), Sanders
patent: 4489101 (1984-12-01), Shibata
patent: 4495218 (1985-01-01), Azuma et al.
patent: 4498953 (1985-02-01), Cook et al.
patent: 4510178 (1985-04-01), Paulson et al.
patent: 4526665 (1985-07-01), Tanielian et al.
Electronics, vol. 53, No. 1, 3rd Jan. 1980, New York, USA; R. Allan, "Thin-Film Devices on Silicon Chip Withstand up to 500 C", pp. 39-40.

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