Thin film resistor element and manufacturing method of the same

Electrical resistors – With base extending along resistance element – Resistance element and base formed in layers

Reexamination Certificate

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Reexamination Certificate

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08040213

ABSTRACT:
In order to provide a thin-film resistor and a manufacturing method thereof capable of restraining reduction of a Q-value of varactor by reducing a parasitic capacitance between the resistor and the substrate, the thin-film resistor includes a semiconductor substrate10including an integrated circuit12having a plurality of electrode pads14placed in a distance from each other in the most upper part of a plurality of stacked interconnections, and the integrated circuit12having a passivation film16formed between the plurality of electrode pads14; a secondary interconnections18electrically connected to the electrode pads14; an insulating film20formed in a place in between the secondary interconnections18on the passivation film16; and a resistor26formed18in a predetermined place in between the secondary interconnections18on the insulating film20.

REFERENCES:
patent: 5798684 (1998-08-01), Endo et al.
patent: 5896264 (1999-04-01), Bijlenga et al.
patent: 2007/0124918 (2007-06-01), Su et al.
patent: 2009/0267727 (2009-10-01), Ashikaga
patent: 2005-136360 (2005-05-01), None
patent: 2006-186038 (2006-07-01), None
A-S. Porret et al., “Design of High-Q Varactors for Low-Power Wireless Applications using a Standard CMOS Process”, IEEE 1999 Custom Integrated Circuits Conference, p. 641-644.

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