Thin film resistor and wiring board using the same

Electrical resistors – With base extending along resistance element – Resistance element coated on base

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338309, 2041921, 427101, 437 60, H01C 1012

Patent

active

052353133

ABSTRACT:
A thin film resistor having a characteristic that an increase phenomenon of a resistance controlled at a high temperature is generated. The resistor is obtained by controlling its composition and manufacturing method so as to suppress an increase in the resistance of a Cr-Si resistor thin film due to deposition of chromium silicide at a high temperature. A sputtering target, which is used as a raw material for forming the thin film, is made from chromium silicide and silicon so that some chromium silicide is already formed immediately after deposition, and chromium oxide and silicon oxide are contained in the thin film so as to suppress the speed whereat chromium and silicon, which do not form silicide, form silicide by heating after deposition and to allow the above silicide formation to advance slowly.

REFERENCES:
patent: 3765940 (1973-10-01), Hentzchel
patent: 4392992 (1983-07-01), Paulson et al.
patent: 4467519 (1984-08-01), Glang et al.
patent: 4510178 (1985-04-01), Paulson et al.
patent: 4591821 (1986-05-01), Paulson et al.

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