Thin-film resistor and process for producing the same

Details Thin-film resistor and process for producing the same Thin-film resistor and process for producing the same

1995-04-25

1997-05-27

Beck, Shrive

Coating processes

Electrical product produced

Resistor for current control

4271261, 4271265, 427226, B05D 512

Patent

active

056330359

ABSTRACT:
A thin-film resistor comprising a mixture of rhodium (Rh) oxide as a resistive material, and at least one element M selected from the group consisting of silicon (Si), lead (Pb), bismuth (Bi), zirconium (Zr), barium (Ba), aluminium (Al), boron (B), tin (Sn), and titanium (Ti), wherein M/Rh, or the ratio of the number of element M atoms to that of rhodium (Rh) atoms is in the range of 0.3 to 3.0. Thin-film resistor is formed from the process of preparing a solution of an organometallic material, coating the material on a substrate, drying and then firing the material at a peak temperature not less than 500.degree. C.

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Communication from European Patent Office dated Oct. 7, 1992.

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