Thin film resistor and method of forming the resistor on...

Electrical resistors – Mechanically variable – Resistance value varied by removing or adding material

Reexamination Certificate

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C257SE21004

Reexamination Certificate

active

07633373

ABSTRACT:
A thin film resistor is formed to have very accurately defined dimensions which, in turn, allow the resistive value of the resistor to be very accurately defined. The resistor is formed on spaced-apart conductive pads which, in turn, are electrically connected to conductive plugs that are spaced apart from the resistor.

REFERENCES:
patent: 5466484 (1995-11-01), Spraggins et al.
patent: 7306552 (2007-12-01), Choi et al.
patent: 2006/0118908 (2006-06-01), Erickson et al.
Frederique Ducroquet, et al., “Full CMP Integration of CVD TiN Damascene Sub-0.1um Metal Gate Devices For ULSI Applications”, IEEE Transactions On Electron Devices. vol. 48, No. 8, Aug. 2001, pp. 1816-1821.
H. Achard, et al., “Full CMP Integration of TiN Damascene Metal Gate Devices”, Proceeding of the 30th European Solid-State Device Research Conference, Sep. 11-13, 2000, pp. 408-411.

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