Thin film resistor and method for manufacturing the same

Details Thin film resistor and method for manufacturing the same Thin film resistor and method for manufacturing the same

1993-05-10

1994-11-22

Lateef, Marvin M.

Electrical resistors

With base extending along resistance element

338307, 338314, 156643, H01C 1012, H01L 2100

Patent

active

053672844

ABSTRACT:
An inverted thin film resistor structure comprises a metallic interconnect layer having predetermined patterns delineating two or more metallic interconnect leads (e.g. Al 36) overlaying a supporting layer (e.g. SiO.sub.2 32), an interlevel dielectric layer (e.g. SiO.sub.2 40) overlaying the supporting layer, and planarized so as to expose a top contact portion of the metallic interconnect leads, and an inverted thin film resistor (e.g. TaN 44) overlaying a portion of the planarized interlevel dielectric layer and overlaying the exposed top contact portion of the metallic interconnect leads. The novel inverted thin film resistor structure does not require a protective metal layer and does not require any vias in direct contact with the resistor. In addition, both the thin film resistor and the metallic interconnect can be formed with pattern and etch techniques. Improved resistor control and reliability are generally achieved since the resistor film is deposited on a substantially planar surface, and resistor length is determined by the spacing of the metallic leads rather than the size of the vias.

REFERENCES:
patent: 4676867 (1987-06-01), Elkins et al.
patent: 4968964 (1990-11-01), Nagai et al.
Ghandi, VLSI Fabrication Principles, John Wiley & Sons, N.Y., 1983, pp. 582-585.

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