Thin film resistor and method

Details Thin film resistor and method Thin film resistor and method

1985-08-23

1988-07-26

Goldberg, E. A.

Electrical resistors

With base extending along resistance element

Resistance element coated on base

20419211, 437 8, H01C 1012

Patent

active

047603690

ABSTRACT:
Thin film resistors formed from a metal silicon nitride film are provided in which tungsten, titanium, tantalum, and other group IV A, V A, and VII A metals are included. The silicon to metal ratio varying between about 0.1 and 10.0 and the nitrogen to metal ratio varying between about 0.1 and 10.0 provide sheet resistances which include the useful range of about 100 to over 10,000 ohms per square for films approximately 2,000 angstroms thick. Deposition of these materials by sputtering a metal silicide target in a nitrogen containing atmosphere, such as 20% nitrogen and 80% argon is also provided.

REFERENCES:
patent: 4063211 (1977-12-01), Yasujima et al.
patent: 4217570 (1980-08-01), Holmes
patent: 4288776 (1981-09-01), Holmes
patent: 4343986 (1982-08-01), Mitani et al.
patent: 4392992 (1983-07-01), Paulson et al.
patent: 4609903 (1986-09-01), Toyokura et al.

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