Thin film resistor and dummy fill structure and method to...

Electrical resistors – With base extending along resistance element – Resistance element coated on base

Reexamination Certificate

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C257S536000

Reexamination Certificate

active

07403094

ABSTRACT:
An integrated circuit thin film resistor structure includes a first dielectric layer (18A) disposed on a semiconductor layer (16), a first dummy fill layer (9A) disposed on the first dielectric layer (18B), a second dielectric layer (18C) disposed on the first dummy fill layer (9A), the second dielectric layer (18B) having a first planar surface (18-3), a first thin film resistor (2) disposed on the first planar surface (18-3) over the first dummy fill layer (9A). A first metal interconnect layer (22A,B) includes a first portion (22A) contacting a first head portion of the thin film resistor (2). A third dielectric layer (21) is disposed on the thin film resistor (2) and the first metal interconnect layer (22A,B). Preferably, the first thin film resistor (2) is symmetrically aligned with the first dummy fill layer (9A). In the described embodiments, the first dummy fill layer is composed of metal (integrated circuit metallization).

REFERENCES:
patent: 5763955 (1998-06-01), Findley et al.
patent: 6818966 (2004-11-01), Beach et al.

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