Thin film resistor and a method of producing the same

Details Thin film resistor and a method of producing the same Thin film resistor and a method of producing the same

1976-09-14

1977-08-16

Mack, John H.

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

252518, 338308, 428539, C23C 1500, H01B 100, H01C 700

Patent

active

040424790

ABSTRACT:
The present invention provides a new thin film resistor to be utilized as an electronic element, which consists of tantalum, aluminum and nitrogen. This new thin film resistor has a higher value of sheet resistance and higher stability than conventional thin film resistors. The present invention also provides a method of producing the thin film resistor by a sputtering process carried out with a target made of tantalum and aluminum in an atmosphere of argon and nitrogen thereby forming a thin film on a substrate.

REFERENCES:
patent: 3737343 (1973-06-01), Basseches et al.
patent: 3763026 (1973-10-01), Cordes
W. D. Westwood et al., "Tantalum Thin Films," Academic Press, N.Y., (1975), pp. 138-188, 251-269, 276-280.

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