Thin film resistor

Details Thin film resistor Thin film resistor

1975-06-02

1977-01-04

Albritton, C. L.

Electrical resistors

With base extending along resistance element

Resistance element coated on base

338314, 338308, 357 23, 357 51, 357 59, 427 93, 427 95, 427101, H01C 1012

Patent

active

040017621

ABSTRACT:
A thin film resistor is formed of polycrystalline silicon which contains 2 to 45 atomic percent of oxygen and wherein the resistivity of the polycrystalline silicon film varies as a function of the amount of oxygen contained in the film and wherein the resistivity is substantially higher than polycrystalline silicon not containing oxygen.

REFERENCES:
patent: 3463715 (1969-08-01), Bloom
patent: 3540871 (1970-11-01), Dyer
patent: 3619739 (1971-11-01), Camenzind et al.
patent: 3629667 (1971-12-01), Lubart et al.
patent: 3745647 (1973-07-01), Boleky
patent: 3806361 (1974-04-01), Lehner
patent: 3893151 (1975-07-01), Bosselaun

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