Thin film pyroelectric imaging array

Details Thin film pyroelectric imaging array Thin film pyroelectric imaging array

1993-05-12

1994-03-08

Fields, Carolyn E.

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

250332, G01J 506

Patent

active

052930416

ABSTRACT:
A thin film pyroelectric imaging array fabricated as a Si wafer. A thin film of PbTiO.sub.3 is deposited on a thermally isolated bridge. The bridge suspends the PbTio.sub.3 sensor over a preferentially etched cavity in the Si wafer. Improved thermal isolation increases the responsivity of the sensor to incident radiation. The pyroelectric sensor formed can operate effectively at room temperature.

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Infrared Phys. vol. 33, No. 4, pp. 229-236, 1992, "Infrared Linear Image Sensor using a Poly-Si pn Junction Diode Array", A. Tanaka, et al.
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IEEE Transactions on Electron Devices, vol. ED-25, No. 10, Oct. 1978, "Dynamic Micromechanics on Silicon: Techniques and Devices", Kurt E. Peterson.
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