Thin film piezoelectric resonator and method for...

Details Thin film piezoelectric resonator and method for... Thin film piezoelectric resonator and method for...

2011-06-21

2011-06-21

Dougherty, Thomas M (Department: 2837)

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

Reexamination Certificate

active

07965017

ABSTRACT:
A thin film piezoelectric resonator suppresses deterioration of impedance at antiresonant frequency and has a high Q value. The thin film piezoelectric resonator is provided with a semiconductor substrate (8); an insulating layer (6) formed on the semiconductor substrate (8) in contact with the surface of the semiconductor substrate; and a piezoelectric resonator stack (14) formed above the insulating layer and having a lower electrode (10), a piezoelectric layer (2) and an upper electrode (12) in this order from the insulating layer side. An oscillation space (4) is formed corresponding to an oscillation region where the lower electrode (10) and the upper electrode (12) of the piezoelectric resonator stack (14) overlap each other in the thickness direction. The fixed charge density in the insulating layer (6) is 1×1011cm−2or less. At the time of manufacturing the thin film piezoelectric resonator, the insulating layer is formed in contact with the semiconductor substrate and then, heat treatment at 300° C. or higher is performed under non-oxygenated atmosphere.

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