Chemistry: electrical and wave energy – Processes and products – Vacuum arc discharge coating
Patent
1976-05-26
1977-11-08
Mack, John H.
Chemistry: electrical and wave energy
Processes and products
Vacuum arc discharge coating
250211J, 357 11, 357 15, 357 30, 148174, 148175, 204192S, C23C 1500, H01L 3100
Patent
active
040574768
ABSTRACT:
Photovoltaic diodes prepared by the methods of the invention include p-n (or n-p) heterojunction or homojunction diodes as well as Schottky barrier diodes where both elements of the diode comprise thin monocrystalline films of Pb.sub.1-x Sn.sub.x Te or a thin monocrystalline film of Pb.sub.1-x Sn.sub.x Te and an appropriate thin barrier metal film. Such a monocrystalline Pb.sub.1-x Sn.sub.x Te film is sputter deposited, has a composition Pb.sub.1-x Sn.sub.x Te which may range from x = 0.0 to about x = 0.3 and, consequently, can be preselected to have a photovoltaic response with response cutoff wavelengths ranging from about 6.0.mu.m to about 25.mu.m at 77.degree. K. The first film is sputter deposited under controlled conditions in accordance with the present method, including at low pressure of selected gas and at selected substrate temperature and film growth rate conditions with or without substrate temperature and film growth rate condition with or without substrate bias voltage of from about +30 volts to about -30 volts, so as to control the composition and stoichiometry of the resulting film as well as its carrier type, carrier concentration and Hall mobility to provide selected electro-optical properties. Thereupon a second film is deposited, which is either a film of composition Pb.sub.1-x.sbsb.1 Sn.sub.x.sbsb.1 Te where x.sub.1 may range from 0.0 to about 0.3, in which case this film is deposited directly upon the first film, or a film of thin barrier metal which may be deposited on the first film. The thin barrier metal film is utilized in preparing Schottky type diodes and the film may be lead, indium or the like. The present method provides in a very economical manner at moderate conditions high sensitivity photovoltaic diodes utilizing PbSnTe films requiring no costly and tim consuming post-deposition treatment such as annealing.
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Crisp Michael J.
Krikorian Esther
Bissell Henry M.
General Dynamics Corporation
Johnson Edward B.
Mack John H.
Weisstuch Aaron
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