Thin film phosphor-converted light emitting diode device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

Reexamination Certificate

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C257S081000, C257S098000, C257S102000

Reexamination Certificate

active

10785745

ABSTRACT:
A light emitting diode capable of emitting first light having a first peak wavelength is combined with a first phosphor layer overlying the light emitting diode, the first phosphor layer capable of absorbing the first light and emitting second light having a second peak wavelength and a second phosphor layer overlying the light emitting diode, the second phosphor layer capable of emitting third light having a third peak wavelength.

REFERENCES:
patent: 6313181 (2001-11-01), Cohen
patent: 6384529 (2002-05-01), Tang et al.
patent: 6517213 (2003-02-01), Fujita et al.
patent: 6576930 (2003-06-01), Reeh et al.
patent: 6696703 (2004-02-01), Mueller-Mach et al.

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