Thin-film patterning method, manufacturing method of...

Etching a substrate: processes – Forming or treating article containing magnetically...

Reexamination Certificate

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C216S047000, C216S048000, C216S066000, C204S192340, C250S39600R, C250S492210

Reexamination Certificate

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06936180

ABSTRACT:
At least one strippable film on a surface of a thin film to be patterned is formed, then the at least one strippable film and the thin film to be patterned is patterned by using FIB, and thereafter the at least one strippable film is removed.

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Morimoto et al., “A GaAs Metal-Semiconductor Field-Effect Transistor With a Mushroom Gate Fabricated by Mixed Exposure of Focussed Ion Beams”□□J. Vac. Sci. Technology, B, vol. 5 No. 1 Jan./Feb. 1987, pp. 211-214.□□.

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