Thin film oxygen sensor with microheater

Details Thin film oxygen sensor with microheater Thin film oxygen sensor with microheater

1983-11-15

1986-03-04

Albritton, C. L.

Electrical resistors

Resistance value responsive to a condition

Gas, vapor, or moisture absorbing or collecting

73 23, 73 27R, 422 98, H01L 700

Patent

active

045742642

ABSTRACT:
A thin film oxygen sensor with a microheater incorporates an oxide semiconductor and has an integral structure of a sensor portion and a heater portion, wherein a porous catalyst layer is formed on a surface of the sensor portion, and a thickness and an average pore diameter of the catalyst layer are determined such that a ratio of the thickness to the average pore diameter falls within a range of 50 to 3,000. The oxygen sensor has good reproducibility, high stability, and high sensitivity for changing a resistance in response to a change in an oxygen content in an atmosphere. The oxygen sensor can be manufactured at low cost and has a compact construction.

REFERENCES:
patent: 3479257 (1969-11-01), Shaver
patent: 4187486 (1980-02-01), Takahashi et al.
patent: 4224280 (1980-09-01), Takahama et al.
patent: 4242303 (1980-12-01), Takahashi et al.
patent: 4259292 (1981-03-01), Ichinose et al.
patent: 4313338 (1982-02-01), Abe et al.
patent: 4343768 (1982-08-01), Kimura
patent: 4351182 (1982-09-01), Schmidberger
patent: 4396899 (1983-08-01), Ohuo
Heiland, "Homogeneous Semiconducting Gas Sensors", Sensors and Actuators, vol. 2, #4, Sep. 1982, pp. 343-359.

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