Thin film oxide dielectric structure and method

Chemistry: electrical and wave energy – Processes and products

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204 383, 204 42, 204 58, 204228, 204274, C25D 1112

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active

049369571

ABSTRACT:
A metallic oxide such as aluminum oxide of significantly improved electrical properties is disclosed. The method of oxide formation includes a combination of soft porous anodization followed by transformation to a hard barrier form of oxide using inter alia low temperature electrolytes, constant voltage anodizing, and timely rate of current change responsive termination of the anodizing process. Use of the resulting oxide in electrical insulation, optic and other environments is contemplated.

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