Patent
1986-11-26
1989-02-28
James, Andrew J.
357 67, 357 68, 357 71, 357 56, 357 80, 357 81, H01L 4500, H01L 2944, H01L 2946, H01L 2986
Patent
active
048090441
ABSTRACT:
Solid-state overvoltage protection devices, preferably formed of deposited thin film, chalcogenide, threshold switching materials, typically include at least one elongated current conduction path through an elongated cross-sectional area of the threshold switching material. The cross-sectional area is formed with a length far exceeding the effective width thereof for distributing the transient current produced by overvoltage conditions over a relatively large area. In this manner, the concentration of localized heating effects can be avoided.
REFERENCES:
patent: 4433342 (1984-02-01), Patel et al.
Pearson et al. "Filamentary Conduction in Semiconductor Glass Diodes", Appl. Phys. Lett. vol. 14, No. 9, May 1969, pp. 280-282.
Formigoni Napoleon P.
Ovshinsky Stanford R.
Pryor Roger W.
Energy Conversion Devices Inc.
Goldman Richard M.
James Andrew J.
Lamont John
Siskind Marvin S.
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