Thin film orthogonal microsensor for air flow and method

Details Thin film orthogonal microsensor for air flow and method Thin film orthogonal microsensor for air flow and method

1987-12-07

1990-04-03

Wojciechowicz, Edward J.

357 51, 7320416, 7320426, H01L 2984, H01L 2996

Patent

active

049147420

ABSTRACT:
A microbridge air flow sensor which has a sealed etched cavity beneath the silicon nitride diaphragm so that the cavity is not susceptible to contamination from residual films or other material accumulating within the cavity. The cavity thermally isolates the heater and detectors which are encapsulated in the diaphragm. The cavity is fabricated by front side etching of the silicon wafer. Narrow slots are made through the silicon nitride diaphragm to expose a thin film (400 angstrom) rectangle of aluminum. A first etch removes the aluminum leaving a 400 angstrom very shallow cavity under the diaphragm. Anisotropic etch is then introduced into the shallow cavity to etch the silicon pit.

REFERENCES:
patent: 4682503 (1987-07-01), Higashi et al.
patent: 4766666 (1988-08-01), Sugiyama et al.
Wert et al., Physics of Solids, McGraw-Hill, 1970, pp. 23-27.
S. Sugiyama et al., "Micro-Diaphragm Pressure Sensor", IEDM 1986, pp. 184-187.

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