Thin-film multilayered electrode, high-frequency resonator, and

Details Thin-film multilayered electrode, high-frequency resonator, and Thin-film multilayered electrode, high-frequency resonator, and

1997-01-22

1999-07-06

Ham, Seungsook

Wave transmission lines and networks

Resonators

333238, 3332191, H01P 300, H01P 700

Patent

active

059202440

ABSTRACT:
An inexpensive and reliable thin-film multilayered electrode which is formable on a dielectric substrate such as a ceramic substrate. A thin-film multilayered electrode has thin-film conductors and thin-film dielectrics formed by alternately layering on a dielectric substrate with a predetermined dielectric constant. The dielectric constant for each of the thin-film dielectrics is selected such that the electromagnetic field created in the dielectric substrate and the electromagnetic field created in each of the thin-film dielectrics are substantially in phase with each other when the thin-film multilayered electrode is used at a predetermined frequency, and the film thickness of each of the thin-film dielectrics falls between 0.2 .mu.m and 2 .mu.m; and the film thickness of each of the thin-film conductors, other than a thin-film conductor formed most distant from the dielectric substrate, is thinner than the skin depth at the predetermined frequency.

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Blennemann et al., Novel Microstructures for Low-Distortion Chip-to-chip Interconnects, International Conf. on Adv. in Interconnection and Packaging, SPIE vol. 1389, pp. 215-235, Nov. 1990.
Patent Abstracts of Japan, vol. 96, No. 11, Nov. 29, 1996 & JP 08 191208 A (Murata Mfg. Co., Ltd.) Jul. 23, 1996, abstract.
European Serach Report dated Feb. 25, 1998.

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