Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-09-13
2005-09-13
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S760000, C257S774000, C257S775000, C257S776000, C428S209000, C428S210000, C156S233000, C156S234000, C156S235000
Reexamination Certificate
active
06943447
ABSTRACT:
A thin film multi-layer wiring substrate comprising a plurality of wiring layers, each adjacent pair of wiring layers being separated by an insulating layer, wherein at least one of the wiring layers includes wiring formed by an inner conductor member and a conductor layer surrounding the periphery thereof through an insulating material.
REFERENCES:
patent: 5439732 (1995-08-01), Nagasaka et al.
patent: 6143116 (2000-11-01), Hayashi et al.
patent: 2002/0182958 (2002-12-01), Tani et al.
patent: 08-181485 (1996-07-01), None
patent: 11-154675 (1999-06-01), None
Hayashi Nobuyuki
Ishizuki Yoshikatsu
Mizukoshi Masataka
Yamagishi Yasuo
Armstrong Kratz Quintos Hanson & Brooks, LLP
Le Dung A.
LandOfFree
Thin film multi-layer wiring substrate having a coaxial... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film multi-layer wiring substrate having a coaxial..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film multi-layer wiring substrate having a coaxial... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3385088