Thin film MOS transistor having pair of gate electrodes opposing

Details Thin film MOS transistor having pair of gate electrodes opposing Thin film MOS transistor having pair of gate electrodes opposing

1990-10-19

1992-08-18

Carroll, J.

357 4, 357 2324, H01L 2712, H01L 2701, H01L 2713, H01L 4500

Patent

active

051403919

ABSTRACT:
A thin film MOS transistor has a construction which can minimize scattering of electron and thus maximize electrons mobility for allowing higher speed operation of the transistor. For this, the MOS transistor has a thin film semiconductor layer having a thickness in a range less than or equal to 100 nm, between a pair of gate electrodes which oppose each other across the semiconductor layer.

REFERENCES:
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patent: 3500137 (1970-05-01), Schroen et al.
patent: 4422090 (1983-12-01), Shepherd et al.
Charles L. Cohen "New FET Design Could Speed the Arrival of 34-D Circuits"Electronics (Sep. 1985) p. 14.
C. Cohen, "3-d IC may auger denses VLSI circuitry; multiple layers are a possibility", Electronics, vol. 56, No. 29 Sep. 22 1983). p. 92.
"An Experimental Study of the Indium Antimonide Thin Film Transistor" Solid State Electronics, vol. 22, No. 1, Jan. 1979, pp. 77-89 Van Calster.
"A Super Thin Transistor in Advanced Poly Si Films", Japanese Journal of Applied Physics, vol. 25, No. 4, Par 2, Apr. 1986, pp. 1291-1293, T. Ohshima.
"New FET Design Could Speed the Arrival of 3-D Circuits", Electronics, vol. 58, No. 36, Sep. 9, 1985, C. L. Cohen.
"Dual-a-Si:H Thin Film Transistors", IEEE Electron Device Letter, vol. EDL-3, No. 12, Dec. 1982, Tuan, et al.

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