Thin-film microstructure sensor having a temperature-sensitive r

Details Thin-film microstructure sensor having a temperature-sensitive r Thin-film microstructure sensor having a temperature-sensitive r

1998-01-27

2000-09-12

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257414, 257415, 257768, 257769, H01L 2714, H01L 2982, H01L 2348, H01L 2352, H01L 2940

Patent

active

061181668

ABSTRACT:
A thin-film microstructure sensor includes a substrate having an insulation layer. A thin-film platinum temperature-sensitive resistor is provided on the insulation layer of the substrate, the thin-film platinum temperature-sensitive resistor comprising a platinum layer, the platinum layer having a maximum crystal grain size above a reference grain size of 800 .ANG.. The thin-film platinum temperature-sensitive resistor is formed by a sputtering process to provide a temperature coefficient of resistance TCR above a reference TCR level of 3200 ppm.

REFERENCES:
patent: 4472239 (1984-09-01), Johnson et al.
patent: 4650561 (1987-03-01), Robins et al.
patent: 4931851 (1990-06-01), Sibbald et al.
patent: 4952904 (1990-08-01), Johnson et al.
patent: 5780173 (1998-07-01), Harrington et al.

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