Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1995-05-19
1997-05-20
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257758, 257759, 257753, 257762, 257766, H01L 2348, H01L 2940
Patent
active
056314981
ABSTRACT:
A metallization layer is formed on a substrate with improved adhesion thereto by performing the deposition at an elevated temperature which favors the formation of chemical bonds of the metal to the substrate as well as clusters of metal embedded within the substrate and contiguous with the metallization layer. In polymer substrates the chemical bond is made to carbonyl functional groups such as ketones or aldehydes. The adhesion is enhanced by the removal of moisture from the surface of the substrate at the elevated temperatures employed. A high degree of adhesion is also obtained through the deposition of a mixture of metals including chromium and copper which initially has a high chromium to copper ratio which is decreased during the deposition process. Completion of the process is determined by the reaching of a final desired chromium to copper ratio as observed by optical emission spectroscopy. The process can be carried out on a continuous basis by the use of a multi-chamber vacuum sputtering system.
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Anschel Morris
Hayunga Carl P.
Ormond Douglas W.
Blecker Ira D.
Clark Jhihan B.
International Business Machines - Corporation
Saadat Mahshid D.
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