Thin film memory device having superconductor keeper for elimina

Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k

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365161, 505701, 505703, G11C 1114, G11C 1144

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active

050396552

ABSTRACT:
A thin film magnetic array memory affords relatively high packing densities while avoiding the problem of magnetic domain creep through the use of thin films of superconducting material disposed on the work lines of the memory. The superconducting films shunt magnetic fields generated by currents carried within the word lines and prevent these fields from adversely affecting adjacent memory cells in the array. By constraining the magnetic fields with the use of the superconducting films, the word lines can be packed close to one another in the array structure, thereby increasing the amount of information that can be stored in a unit area of the array.

REFERENCES:
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patent: 3541532 (1970-11-01), Newhouse et al.
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C. Michel et al., "Superconductivity in the Bi-Si-Cu-O System", Z. Phys. B-Condensed Matter, Oct. 1987, vol. 68, pp. 421-423.
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J. Carisio, Dupont Corporate News, 2-9-88, pp. 1, 2.
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C. Chu et al., "Superconductivity Up to 114K in the Bi-Al-Ca-Sr-Cu-O Comp. Sys. w/o Rare Earth Elem.", Phys. Rev. Lett., vol. 60, #10, Mar. 7, 1988, pp. 941-943.
R. Hazen et al., "Superconductivity in the High-Tc Bi-Ca-Sr-Cu-O System: Phase IO", Phys. Rev. Lett., vol. 60, #12, Mar. 21, 1988, pp. 1174-1177.
R. van Dover et al., "Crit. Curr. Den. in Single-Crystal Bi.sub.2,2 Sr.sub.2 Ca.sub.0,8 Cu.sub.2 O.sub.8+d ", Appl. Phys. Lett., May 30, 1988, pp. 1910-1912.
"Are the Days Numbered for Plated-Wire Memories?", Electronics, Oct. 1, 1987, p. 31, W. Iversen.

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