Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2005-03-29
2005-03-29
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S659000, C365S158000, C365S171000
Reexamination Certificate
active
06872993
ABSTRACT:
A monolithically formed ferromagnetic thin-film memory is disclosed that has local shielding on at least two sides of selected magnetic storage elements. The local shielding preferably extends along the back and side surfaces of a word line and/or digital lines of a conventional magnetic memory. In this configuration, the local shielding not only may help reduce externally generated EMI, internally generated cross-talk and other unwanted fields in the magnetic bit region, but may also help enhance the desired magnetic fields in the bit region.
REFERENCES:
patent: 3623032 (1971-11-01), Schapira
patent: 3623035 (1971-11-01), Kobayashi et al.
patent: 5432734 (1995-07-01), Kawano et al.
patent: 5661062 (1997-08-01), Prinz
patent: 5861328 (1999-01-01), Tehrani et al.
patent: 5902690 (1999-05-01), Tracy et al.
patent: 5940319 (1999-08-01), Durlam et al.
patent: 5956267 (1999-09-01), Hurst et al.
patent: 6048739 (2000-04-01), Hurst et al.
patent: 6165803 (2000-12-01), Chen et al.
patent: 6510078 (2003-01-01), Schwarzl
patent: 6580636 (2003-06-01), Thewes et al.
patent: 20010030886 (2001-10-01), Thewes et al.
patent: 20010050859 (2001-12-01), Schwarzl
Wang et al., Feasibility of Ultra-Dense Spin-Tunneling Random Access Memory, IEEE Transactions on Magnetics, vol. 33, No. 6, Nov. 1997.
Lee, Chih-Ling, “A Study of Magnetoresistance Random-Access Memory,” date unknown.
Kaakani, H. “Non-Volatile Memory (MRAM) ANXXX,” [online], Honeywell, Mar. 1999 [retrieved on Nov. 19, 2001]. Retrieved from the Internet: <URL: www.ssec.honeywell.com/avionics/h_gmr.pdf>.
Sather Jeffrey S.
Zhu Theodore
Andújar Leonardo
Flynn Nathan J.
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
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