Thin film mask for use in an x-ray lithographic process and its

Details Thin film mask for use in an x-ray lithographic process and its Thin film mask for use in an x-ray lithographic process and its

1993-03-19

1994-05-24

Rosasco, Steve

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

427552, 427595, 378 34, 378 35, 423446, G03F 900

Patent

active

053147685

ABSTRACT:
A thin film mask for use in an X-ray lithographic process is disclosed herein along with a method of making the mask which is comprised of a diamond thin film layer supported on one surface of an X-ray transparent non-diamond substrate, for example silicon. A predetermined pattern of ions of a substance opaque to X-rays, for example a heavy atomic number substance such as gold, tungsten or cesium, is introduced into the diamond thin film layer as opposed to being deposited thereon. In one embodiment disclosed herein, this is accomplished by means of ion implantation, and in a second embodiment by means of an ion beam direct write device.

REFERENCES:
patent: 4686162 (1987-08-01), Stangl et al.
patent: 5221411 (1993-06-01), Narayan
Isotopic effects in a-C:(H/D) films deposited methane/hydrogen RF plasmas, D. Boutard and W. Moller, Materials Research Society, J. Mater, Res., vol. 5, No. 11, Nov. 1990.

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