Thin film magnetic memory device and manufacturing method...

Details Thin film magnetic memory device and manufacturing method... Thin film magnetic memory device and manufacturing method...

2006-03-21

2006-03-21

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S003000, C438S240000, C257S421000, C257S295000

Reexamination Certificate

active

07015059

ABSTRACT:
A thin film magnetic memory device includes: a TMR element, provided on a main surface of a silicon substrate, operating as a memory element; a buffer layer having a first surface bringing into contact with the TMR element and a second surface, located on the side opposite to the first surface, having an area smaller than that of the first surface; and a bit line, formed of a conductor film and a barrier metal film that bring into contact with the second surface, extending in one direction so as to intersect the TMR element. Thereby, it is possible to provide a thin film magnetic memory device realizing miniaturization of the memory cell and, also, having a high reliability, and a manufacturing method therefor.

REFERENCES:
patent: 6768150 (2004-07-01), Low et al.
patent: 6780652 (2004-08-01), Lee
patent: 6916668 (2005-07-01), Spielberger et al.
patent: 6936479 (2005-08-01), Sharma
patent: P2002-204010 (2002-07-01), None
patent: P2002-305290 (2002-10-01), None

Affiliated with

Also associated with

Rating

Thin film magnetic memory device and manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film magnetic memory device and manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film magnetic memory device and manufacturing method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3567984