Thin-film magnetic head including low-resistance TMR element

Details Thin-film magnetic head including low-resistance TMR element Thin-film magnetic head including low-resistance TMR element

2006-06-26

2009-08-11

Renner, Craig A (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07573686

ABSTRACT:
An MR element comprises: a tunnel barrier layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the tunnel barrier layer and having a direction of magnetization that changes in response to a signal magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the tunnel barrier layer and having a fixed direction of magnetization. The tunnel barrier layer is made of a material containing an oxide semiconductor such as ZnO. The MR element has a resistance-area product that falls within a range of 0.3 to 2.0 Ω-μm2inclusive.

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