Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-06-06
2011-11-08
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S288000, C365S113000, C365S163000
Reexamination Certificate
active
08053753
ABSTRACT:
A multi-layer thin-film device includes thin film memory and thin film logic. The thin film memory may be programmable resistance memory, such as phase change memory, for example. The thin film logic may be complementary logic.
REFERENCES:
patent: 6795338 (2004-09-01), Parkinson et al.
patent: 7839673 (2010-11-01), Lowrey
patent: 7859895 (2010-12-01), Lowrey
patent: 2004/0114413 (2004-06-01), Parkinson et al.
Bray Kevin L.
Le Dung A.
Ovonyx Inc.
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