Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2006-10-10
2008-08-19
Rose, Kiesha L (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C313S502000, C313S503000
Reexamination Certificate
active
07414271
ABSTRACT:
A method of fabricating a light emitting diode (LED) includes providing an LED chip that emits light having a first wavelength where the LED chip includes a first electrical contact and a second electrical contact. The method further includes forming a tinted thin film layer over the LED chip where the tinted thin film layer interacts with the first wavelength light to produce a light having a second wavelength.
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Authors: Mensz, P. M.; Kellawon, P.; van Rojen, R.; Kozodoy, P.; Denbaars, S.; Titled: “InxGa1-xN/AIyGa1-yN violet light emitting diodes with reflective p-contacts for high single sided light extraction”: Electronics Letters; 20thNov. 1997; vol. 33—No. 24.
Michael Kneissl, et al., “Continuous-Wave Operation of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates Obtained by Laser Liftoff”, IEEE Journal on Selected Topics in Quantum Electronics, vol. 7, No. 2, Mar./Apr. 2001; pp. 188-191.
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William S. Wong, et al., “The integration of INxGA1-xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off”, Jpn. J. Appl. Phys. vol. 39 (2000) pp. L 1203-L1205, Part 2, No. 12A, Dec. 1, 2000; pp. L 1203-L 1205.
LG Electronics Inc.
McKenna Long & Aldridge LLP
Rose Kiesha L
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