Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2008-09-02
2008-09-02
Rose, Kiesha L (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257S099000, C313S498000, C313S512000, C313S506000
Reexamination Certificate
active
10795287
ABSTRACT:
Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a tinted thin film layer over the LED chip that changes the color of the emitted light. For example, a blue-light emitting LED chip can be used to produce white light. The tinted thin film layer beneficially consists of ZnSe, CeO2, Al2O3, or Y2O3:Ce that is deposited using a chemical vapor deposition process, such as metal organic chemical vapor deposition (MOCVD), atomic layer chemical vapor deposition (ALD), plasma enhanced MOCVD, plasma enhanced ALD, and/or photo enhanced CVD. Suitable CVD precursors include Alkoxide, β-dikeonate, Metalloscene, Alkys, DMZn, DEZe, H2Se, DMSe, TbuSe, and DESe.
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William S. Wong, et al., “The integration of InxGa1−xN Multiple-Quantum-Well Laser Diodes with Copper Substrates by Laser Lift-Off”, Jpn. J. Appl. Phys. vol. 39 (2000) pp. L 1203-L 1205, Part 2, No. 12A, Dec. 1, 2000; pp. L1203-L1205.
LG Electronics Inc.
McKenna Long & Aldridge LLP
Rose Kiesha L
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