Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-11-07
1999-06-15
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257350, 257365, H01L 2976
Patent
active
059124741
ABSTRACT:
A P-channel thin film transistor is added to a CMOS circuit constituted of a P-channel thin film transistor and an N-channel thin film transistor. By utilizing a voltage drop in the inserted P-channel thin film transistor, the strength of an electric field in the vicinity of the drain of the original P-channel thin film transistor can be weakened, reducing its leak current. This enables suppression of the power consumption of the entire CMOS circuit.
REFERENCES:
patent: 5250835 (1993-10-01), Izawa
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5528056 (1996-06-01), Shimada et al.
Hardy David B.
Semiconductor Energy Laboratory Co,. Ltd.
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