Thin film fuse phase change RAM and manufacturing method

Details Thin film fuse phase change RAM and manufacturing method Thin film fuse phase change RAM and manufacturing method

2007-12-19

2009-08-25

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S005000, C257SE45002

Reexamination Certificate

active

07579613

ABSTRACT:
A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. In the array, a plurality of electrode members and insulating members therebetween comprise an electrode layer on an integrated circuit. The bridges of memory material have sub-lithographic dimensions.

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