Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2008-01-22
2008-01-22
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S529000, C365S163000
Reexamination Certificate
active
07321130
ABSTRACT:
A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. In the array, a plurality of electrode members and insulating members therebetween comprise an electrode layer on an integrated circuit. The bridges of memory material have sub-lithographic dimensions.
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Chen Shih-Hung
Lung Hsiang Lan
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Prenty Mark V.
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