Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-08-22
2009-10-06
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002
Reexamination Certificate
active
07598512
ABSTRACT:
A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating member has a thickness between the first and second electrodes near the top side of the first electrode and the top side of the second electrode. A bridge of memory material crosses the insulating member, and defines an inter-electrode path between the first and second electrodes across the insulating member. An array of such memory cells is provided. The bridge comprises an active layer of memory material on the first side having at least two solid phases and a blanket of thermal insulating material overlying the memory material having thermal conductivity less than that of an overlying electrically insulating layer.
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Lai, Stefan,
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Prenty Mark
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