Thin film forming method

Details Thin film forming method Thin film forming method

1993-06-15

1996-07-30

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Vacuum arc discharge coating

20419215, 20419217, C23C 1434

Patent

active

055408206

ABSTRACT:
A method of forming a thin film by a bias sputtering method using a first target made of a refractory metal mainly composed of W and a second target made of a conductive material mainly composed of a low-melting-point metal which comprises, upon sputtering the first target made of the refractory metal mainly composed of W, decreasing high energy particles incident to a substrate in a state where a desired bias voltage is applied to a substrate thereby forming a thin film of the refractory metal mainly composed of W with low resistivity and less stress and, subsequently, upon sputtering the second target made of the conductive material mainly composed of the low-melting-point metal, accelerating the growth of crystals in a state where a desired voltage is applied to a substrate thereby forming in lamination a thin film of the conductive material mainly composed of the low-melting-point metal with a large crystal grain size on the thin film made of the refractory metal mainly composed of W.

REFERENCES:
patent: 3437888 (1969-04-01), Hall
patent: 3515663 (1970-06-01), Bodway
patent: 4468437 (1984-08-01), Patten et al.
patent: 4710398 (1987-12-01), Homma et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4785962 (1988-11-01), Toshima
patent: 4816126 (1989-03-01), Kamoshida et al.
patent: 4851101 (1989-07-01), Hutchinson
Journal of Applied Physics, vol. 16, #1, "Thin Films Deposited by Bias Sputtering"--Maissel and Schaible.
Applied Surface Science 38 (1989) 295-303 "Stresses in Sputtered Tungsten Thin Films", CNRS, Laboratoire de Microstructure et de Microelectronique.

Affiliated with

Also associated with

Rating

Thin film forming method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film forming method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film forming method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1655897