Coating apparatus – Gas or vapor deposition – With treating means
Patent
1988-02-10
1989-08-08
Bueker, Richard
Coating apparatus
Gas or vapor deposition
With treating means
20419231, 204298, C23C 1448
Patent
active
048542652
DESCRIPTION:
BRIEF SUMMARY
TECHNICAL FIELD
This invention relates to a thin film forming apparatus suitable for the formation of thin metal films or semiconductor films composing IC, LSI, etc.
BACKGROUND TECHNIQUE
Conventionally, as a means typical of a PVD process for forming a thin film, there is a so-called ion plating process which includes generating a high-frequency electromagnetic field between a source of evaporation and an object to be vapor-deposited (substrate) to ionize substances evaporated in an active gas or an inert gas to perform vacuum vapor deposition. Also, a DC ion plating process which applies a d.c. voltage between a source of evaporation and an object to be vapor-deposited is proposed in Published Examined Patent Applications Nos. 29971/1977 and 29091/1977, etc. According to these methods, the surface of a substrate which is an object to be vapor-deposited is cleaned and activated by ion impact and the adhesion of a film formed is high. However, these methods have the drawback that in order to obtain predetermined ionization, a certain quantity of active or inert gas must be introduced into a vacuum tank and the quality of the resultant thin film is not so good.
In contrast, a CVD process is capable of forming a film by using a relatively simple installation compared to the PVD process and has strong reactiveness. However, the substrate must be raised to a predetermined temperature, so that this method cannot be applied to a substrate, for example, of plastics having no thermal resistance.
A first object of this invention has been made in view of the above and is to provide a new thin-film forming apparatus which is capable of forming a thin film efficiently.
A second object of this invention is to provide a thin film forming apparatus which is applicable to a substrate, for example, of plastics having no thermal resistance.
A third object of this invention is to provide a thin film forming apparatus which is not influenced by an electric field which varies depending on the shape of a source of evaporation or thermal electrons produced from the source of evaporation.
DISCLOSURE OF THE INVENTION
The first object of this invention is achieved by a thin film forming apparatus comprising:
a vacuum tank capable of introducing an active gas and/or an inert gas thereinto;
a source of evaporation disposed within the tank;
a counter electrode disposed opposite to the source of evaporation within the tank and holding a substrate to be vapor-deposited;
a filament disposed between the source of evaporation and the counter electrode for generating thermal electrons;
a grid disposed between the filament and the source of evaporation for allowing evaporated substances to pass therethrough;
power source means for realizing a predetermined electric state within the tank; and
electrically conductive means for electrically connecting the tank inside and the power source means,
the grid being put at positive potential relative to the counter electrode.
The second object of this invention is achieved by a thin film forming apparatus comprising a vacuum tank for introducing an active gas, an inert gas or a mixed gas of both thereinto; a source of evaporation for evaporating an evaporable substance within the tank; a counter electrode disposed within the tank, holding a substrate so that the substrate is opposite to the source of evaporation, and put at the same potential as, or at a negative potential relative to, the source of evaporation; a grid disposed between the source of evaporation and the counter electrode, and put at a positive potential relative to the counter electrode and the source of evaporation for allowing evaporated substances to pass therethrough; and a filament disposed between the grid and the source of evaporation for generating thermal electrons.
The third object of this invention is achieved by a thin film forming apparatus comprising a vacuum tank for introducing an active gas, an inert gas or a mixed gas of such active and inert gases thereinto; a source of evaporation for evaporating an evaporable
REFERENCES:
patent: 4440108 (1984-04-01), Little
patent: 4480010 (1983-05-01), Sasanuma
Katuragawa Tadao
Kinoshita Mikio
Ohta Wasaburo
Bueker Richard
Ricoh & Company, Ltd.
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