Thin film forming apparatus

Coating apparatus – Gas or vapor deposition – With treating means

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118723E, 118723I, 118723MW, 118723AN, 156345, C23C 1600

Patent

active

06116187&

ABSTRACT:
A thin film forming apparatus has a vacuum chamber as a film forming chamber, a plasma generating unit and an ion source. In the vacuum chamber, a substrate is placed and a thin film is formed on the substrate. The plasma generating unit decomposes a source gas introduced into the vacuum chamber to generate a plasma of the source gas near a film-forming surface of the substrate within the vacuum chamber. The ion source is provided around the vacuum chamber. The ion source produces ion beams that are drawn out to be directed substantially parallel to the film-forming surface of the substrate to irradiate the plasma.

REFERENCES:
patent: 4599135 (1986-07-01), Tnusekawa et al.
patent: 4874459 (1989-10-01), Coldren et al.
patent: 5132105 (1992-07-01), Remo

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