Coating apparatus – Gas or vapor deposition – With treating means
Patent
1999-05-20
2000-09-12
Knode, Marian C.
Coating apparatus
Gas or vapor deposition
With treating means
118723E, 118723I, 118723MW, 118723AN, 156345, C23C 1600
Patent
active
06116187&
ABSTRACT:
A thin film forming apparatus has a vacuum chamber as a film forming chamber, a plasma generating unit and an ion source. In the vacuum chamber, a substrate is placed and a thin film is formed on the substrate. The plasma generating unit decomposes a source gas introduced into the vacuum chamber to generate a plasma of the source gas near a film-forming surface of the substrate within the vacuum chamber. The ion source is provided around the vacuum chamber. The ion source produces ion beams that are drawn out to be directed substantially parallel to the film-forming surface of the substrate to irradiate the plasma.
REFERENCES:
patent: 4599135 (1986-07-01), Tnusekawa et al.
patent: 4874459 (1989-10-01), Coldren et al.
patent: 5132105 (1992-07-01), Remo
Mikami Takashi
Murakami Hiroshi
Ogata Kiyoshi
Alejandro Luz
Knode Marian C.
Nissin Electric Co. Ltd.
LandOfFree
Thin film forming apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film forming apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film forming apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-86666