Thin film forming apparatus

Details Thin film forming apparatus Thin film forming apparatus

1998-11-24

2000-04-18

Diamond, Alan

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

29819211, 29829834, 29829836, 29829802, 29829806, 118723R, 118723FI, 118723E, 118723I, C23C 1446

Patent

active

060511206

ABSTRACT:
There is provided a thin film forming apparatus in which plasma of high frequency is made of raw material gas in a film forming chamber 7, a thin film is formed on a surface of a substrate 12 in the film forming chamber 7 by the plasma of high frequency, and a characteristic of the thin film is controlled by irradiating ion beams 4 onto the surface of the substrate 12 at the same time, characterized in that: the substrate 12 is composed of a square plate having a regular square surface or a rectangular surface; and the thin film forming apparatus is provided with a high frequency electrode 13 for forming the plasma of high frequency into a cube or a rectangular parallelepiped to cover an overall surface of the substrate 12, on the surface side of the substrate 12.

REFERENCES:
patent: 4885070 (1989-12-01), Campbell et al.
patent: 5435900 (1995-07-01), Gorokhovsky
patent: 5622635 (1997-04-01), Cuomo et al.

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