Thin film formation technique and equipment

Details Thin film formation technique and equipment Thin film formation technique and equipment

1985-04-22

1987-01-27

Pianalto, Bernard D.

Coating processes

Measuring, testing, or indicating

Thickness or uniformity of thickness determined

118688, 118689, 118690, 118691, 118720, 118721, 118723, 118726, 156DIG103, 156601, 156611, 219271, 219272, 427 38, 4272481, B05D 306

Patent

active

046393773

ABSTRACT:
A thin film formation technique and apparatus therefor which comprises converting a molecular beam effusing from a molecular beam source equipment to a pulsed molecular beam; introducing the pulsed molecular beam into an ionization chamber in such a fashion that the most of the pulsed molecular beam is caused to be incident to a substrate while a part is ionized by the ionization chamber; amplifying the ion or the electron converted from the ion and converting it to an electrical signal; calculating the flux and speed of the molecular beam; controlling the molecular beam effusing from the molecular beam source equipment on the basis of the calculation information; and forming the thin film on the substrate.

REFERENCES:
patent: 2341827 (1944-02-01), Sukumlyn
patent: 3906889 (1975-09-01), Omura et al.
patent: 4543467 (1985-09-01), Eisele et al.
Pamplin, ed. "Molecular Beam Epitaxy", Pergamon Press, 1980, pp. 23-30.
Chang et al, "The Growth of a GaAs--GaAlAs Super Lattice", J. Vac. Sci. Technol., vol. 10, No. 1, Jan./Feb. 1973, pp. 11-16.

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