Thin film formation method for ferroelectric materials

Details Thin film formation method for ferroelectric materials Thin film formation method for ferroelectric materials

1997-06-05

1999-11-02

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

438763, 438981, H01L 21385

Patent

active

059769467

ABSTRACT:
A thin film formation method includes the deposition step of forming a dielectric thin film consisting of many elements. In the deposition step, first- and second-layer thin films are deposited as lower and upper layers on an underlayer, and at least one of the thin films is crystallized to form the dielectric thin film. The first-layer thin film closer to the underlayer is deposited with a larger composition of at least one kind of constituent element of the thin film than stoichiometric composition to allow for diffusion outside the film.

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"Effect of Thermal Processing Conditions on Ferroelectric PZT Thin Films" Kwok et al Mat. Res. Soc. Symp. Proc. vol. 200; 1990; pp. 83-89.

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