Thin film formation apparatus

Details Thin film formation apparatus Thin film formation apparatus

1995-12-11

1998-04-21

Niebling, John

Coating apparatus

Gas or vapor deposition

With treating means

118723MW, C23C 1600

Patent

active

057413649

ABSTRACT:
The present invention relates to relates to a hydrogenated amorphous silicon carbide used as the surface protecting layer of the photosensitive member for electrohotographic apparatus. In view of not allowing generation of blurring of photosensitive member under the high humidity atmosphere, the content (x) of carbon in the hydrogenated amorphous silicon carbide expressed by the general formula a-Si.sub.1-x C.sub.x :H is in the range of 0.4.ltoreq.x.ltoreq.0.8 and a ratio (TO/TA) of the peak (TO) amplitude appearing in the vicinity of 480 cm.sup.-1 and the peak (TA) amplitude appearing in the vicinity of 150 cm.sup.-1 observed by the laser Raman spectroscopy measurement using the excitation laser of Ar.sup.+ 488 nm is set to 2.0 or higher.

REFERENCES:
patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4532199 (1985-07-01), Ueno et al.
patent: 4543465 (1985-09-01), Sakudo et al.
patent: 4689093 (1987-08-01), Ishihara et al.
patent: 4716852 (1988-01-01), Tsuji et al.
patent: 4717585 (1988-01-01), Ishihara et al.
patent: 4772486 (1988-09-01), Ishihara et al.
patent: 4777103 (1988-10-01), No et al.
patent: 4818563 (1989-04-01), Ishihara et al.
patent: 4913929 (1990-04-01), Moslehi et al.
patent: 4989542 (1991-02-01), Kamo
patent: 5122431 (1992-06-01), Kodama et al.
patent: 5151296 (1992-09-01), Tokunaga
patent: 5178905 (1993-01-01), Kanai et al.
patent: 5180436 (1993-01-01), Ueda et al.
patent: 5269848 (1993-12-01), Nakagawa
patent: 5368676 (1994-11-01), Nagaseki et al.
patent: 5447816 (1995-09-01), Kodama et al.
Proceedings of the Eighth E.C. Photovoltaic Solar Energy Conference, Florence, 9th-13th May 1988, vol. 2, pp. 1211-1219, Kluwer Academic Publishers, Dordrecht, NL; Y. Hamakawa: "Electron cyclotron resonance CVD of a-SiC alloy and its application to opto-electronic devices". Whole Document.
Thin Solid Films, vol. 101, No. 1, Mar. 1983, pp. 83-96, Elsevier Sequoia, Lausanne, CH; J.P. Gerault et al.: "X-ray photoelectron spectroscopy and raman spectroscopy investigations of amorphous SixCl-x(H) coatings obtained by chemical vapour depsoition from thermally labile organosilicon compounds". Whole document.

Affiliated with

Also associated with

Rating

Thin film formation apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film formation apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film formation apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2054492