Thin film formation apparatus

Details Thin film formation apparatus Thin film formation apparatus

1989-05-05

1990-12-25

Beck, Shrive

Coating apparatus

Gas or vapor deposition

With treating means

427 39, C23C 1650

Patent

active

049794671

ABSTRACT:
An apparatus for forming thin films on substrates includes a reactor vessel, and discharge and grounded electrodes opposably disposed within the reactor vessel. The discharge electrode has walls surrounding a hollow space having an outlet that is open to the grounded electrode. A starting gas is introduced into the reactor vessel through that hollow space. A radio frequency voltage is applied between the discharge and grounded electrodes to produce a discharge plasma zone therebetween. The potential of the discharge electrode is biased toward the negative side so that the discharge electrode behaves as a cathode to which a direct current voltage is applied, whereby a high density plasma is obtained in the hollow space of the discharge electrode.

REFERENCES:
patent: 4496448 (1985-01-01), Tai et al.
patent: 4633809 (1987-01-01), Hirose et al.
patent: 4681653 (1987-07-01), Purdes et al.
Gill, M. D., "Sustaining Mechanisms in RF Plasmas", Vacuum, vol. 34, Nos. 3-4, (1984), pp. 357-364.

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